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The semiclassical boltzmann equation is applied to spin-dependent transport in magnetic multilayers. The origin of the giant magnetoresistance effect is explained for both the case in which the current flows parallel to the layers and the case in which it is perpendicular to the layers. The approach is first-principles based and includes effects of vertex corrections and local fields.
29 aug 2019 using magnetic conductive probe atomic force microscopy, hall voltage measurements, and spin-dependent electrochemistry of the decaheme.
Sensitively depends on magnetic anisotropy and properties of the magnetic tunnel junctions.
Spin-dependent transport in magnetic nanostructures is based on the physics of the interaction between spin and charge. In this sense, the spin–charge separation of electrons is a starting point for the physics of spin-electronics.
Magnetic oxides have become of interest source for spin transport devices due to their high spin polarization. But the real applications of these oxides remains unsatisfactory up to date, mostly due to the change of properties as a result of nano structuring. High curie temperature and the half metallicity of fe3o4 make it a good potential candidate.
5 mar 2021 spin dependent transport through driven magnetic system keywords: spin polarization; magnetic chain with aah modulation; light.
Spin-dependent transport phenomena in magnetic nanostructures. Sahakyan the state engineering university of armenia, yerevan, armenia.
Buy spin dependent transport in magnetic nanostructures (advances in condensed matter science) on amazon. Com free shipping on qualified orders spin dependent transport in magnetic nanostructures (advances in condensed matter science): maekawa, sadamichi, shinjo, teruya: 9780415272261: amazon.
2020年4月24日 we experimentally compare two types of interface structures with magnetic and nonmagnetic weyl semimetals.
Magnetic-tunnel transistor: the magnetic-tunnel transistor with a single base layer has the following terminals: emitter (fm1): injects spin-polarized hot electrons into the base. Base (fm2): spin-dependent scattering takes place in the base. Collector (gaas): a schottky barrier is formed at the interface. It only collects electrons that have enough energy to overcome the schottky barrier, and when states are available in the semiconductor.
Spin-dependent transport and recombination in solar cells studied by pulsed.
When two magnetic dots are embedded in a nanowire, the single electron tunneling process may be controlled by the magnetic field. This is because the spin-dependent tunneling between the dots are governed by the field. Recently, nanowires with magnetic superlattice struc- ture have been prepared in polycarbonates [11]. Such technique may be applied to the nanowires with magnetic dots.
5 jul 2019 in summary, the spin-dependent transport properties in 2d vdw magnetic tunnel junctions with fe3gete2 electrodes have been investigated.
Recent progress in physics on spin-dependent transport in magnetic nanostructures is reviewed. Special attention is paid to the spin accumulation and spin.
The spin-dependent electronic transport across vd w magnetic tunnel junctions (mtjs) composed of fe 3gete2 ferromagnetic electrodes and a graphene or hex agonal boron nitride (h -bn) spacer layer.
2 jul 2003 on spin dependent transport in magnetic nanostructures is reviewed. And spin current caused by spin injection into non-magnetic metals.
29 nov 2020 the discovery of gmr triggered an extensive research effort on spin transport in magnetic nanostructures.
The charging energy of a metallic grain called a dot embedded in a nanowire causes the single electron tunneling. We propose that when two magnetic dots are embedded in a nanowire, the single electron tunneling process is controlled by an external magnetic field. This is because the tunneling of electrons between magnetic dots depends on the relative angle of the magnetic moments.
Spin-dependent electrical and thermal transport in magnetic tunnel junctions abstract as thermoelectricity can directly convert a temperature di erence to a voltage or a charge current, research in this area has been very active. Recently, the development of spin caloritronics introduced spin as another degree of freedom into traditional.
Introduction into physics of spin-dependent phenomena in nanostructures.
Here, using density functional theory (dft) calculations, we investigate the spin-dependent electronic transport across vdw magnetic tunnel junctions (mtjs) composed of fe 3 gete 2 ferromagnetic electrodes and a graphene or hexagonal boron nitride (h-bn) spacer layer. For both types of junctions, we find that the junction resistance changes by thousands of percent when the magnetization of the electrodes is switched from parallel to antiparallel.
Spin-dependent transport across co/laalo3/srtio3 heterojunctions the corresponding field dependence of vc observed when the magnetic field is applied.
This situation changed dramatically with the discovery of the giant magnetoresistance effect 1, 2 and the advent of reliable and reproducible observations of spin-dependent tunneling. 3, 4, 5 these technologically important effects exist only because of the differences in electron transport between the two spin channels.
We present a theoretical study of the spin-dependent electron transport of a that the single spin-conducting can be obtained by performing different magnetic.
Magnet on spin angular momentum transfer and high frequency magnetization dynamics.
Coherent electronic transport through a molecular device is studied using non- equilibrium green's spin-dependent transport through magnetic nanojunctions.
Spin-dependent transport in ferromagnet-based devices herein are found to heavily depend upon the magnetic state of these materials in the samples.
Butler mint center, the university of alabama 1department of physics, california state university, northridge, ca we present spin-dependent transport calculations in magnetic tunnel junctions.
The charge and spin transport equations is derived from the spin and charge conservation laws. Spin-dependent resistance (for example, giant magnetic resistance (gmr) or tunnel transport in a material with spin dependent conducti.
A brief summary spin-dependent transport calculations were performed for molecular-scale devices made of atomic nanowires attached to ferromagnetic electrodes. The molecular system was treated as a linear hubbard chain (at the hartree-fock level), while the coupling to the electrodes was described within a broad-band theory.
19 jun 2019 edited by two of the world's leading authorities, spin dependent transport in magnetic nanostructures introduces and explains the basic physics.
Spin dependent transport studies in magnetic, non-magnetic, antiferromagnetic, and half metals. By rakhi acharyya this thesis consists of three studies of current-perpendicular-to-the-planes (cpp) mag-netoresistance (mr) of sputtered ferromagnetic/non-magnetic (f/n) multilayers.
Spin dependent transport studies in magnetic, non-magnetic, antiferromagnetic, and half metals. This thesis consists of three studies of current-perpendicular-to-the-planes (cpp) magnetoresistance (mr) of sputtered ferromagnetic/non-magnetic (f/n) multilayers. (a) the first study involves a double-blind comparison of our measurements of the interface specific resistance ar (area a through which the cpp current flows times the cpp resistance r) of pd/ir interfaces.
In summary, we have designed various conceptual nanodevices based on the mnbi 2 te 4 ml (listed in table 1) and investigated their spin-dependent transport properties through extensive first.
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